Texturing Process Optimization for Diamond-Wire-Sawn Monocrystalline Silicon Wafers Using Alkaline Additive Chemistry

Abstract

The transition from slurry-based to diamond-wire wafer sawing has dramatically reduced silicon kerf-loss per wafer but introduced surface micro-saw-mark topography that alkaline texturing chemistries cannot remove without proprietary additive packages. This study reports a comparative evaluation of seven additive-chemistry families across pyramid-size distribution, surface reflectance, weight-loss uniformity, and downstream emitter-formation compatibility. We isolate the role of pyramidal pyramid-size variance in determining encapsulation-induced reflection losses and offer a recipe-development framework for cell manufacturers transitioning between additive vendors. The framework is illustrated with a worked example showing process-window quantification and recipe-stability monitoring during a typical multi-month vendor-switch project.